Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate-Reference-Cited by-同舟云学术

Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate

Published:2010 Issue:3 Volume:157 Page:H355
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Jung Hyung-Suk,Kim Jeong Hwan,Lee Joohwi,Lee Sang Young,Kim Un Ki,Hwang Cheol Seong,Park Jung-Min,Kim Weon-Hong,Song Min-Woo,Lee Nae-In

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. http://www.intel.com/technology/45nm/index.htm, last accessed Dec. 2009.

2. Review on high-k dielectrics reliability issues

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies;Journal of Applied Physics;2020-09-14

2. Interface state degradation during AC positive bias temperature instability stress;Solid-State Electronics;2019-08

3. Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs;Microelectronics Reliability;2013-09

4. Effects of Pt loading in the anode on the durability of a membrane–electrode assembly for polymer electrolyte membrane fuel cells during startup/shutdown cycling;International Journal of Hydrogen Energy;2012-12

5. Effects of residual oxygen partial pressure on the degradation of polymer electrolyte membrane fuel cells under reverse current conditions;Journal of Power Sources;2012-01