Author:
Esteve R.,Schöner A.,Reshanov S. A.,Zetterling C.-M.,Nagasawa H.
Subject
General Physics and Astronomy
Reference12 articles.
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2. Effects of nitridation in gate oxides grown on 4H-SiC
3. N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films
4. Reliability of thermally oxidized SiO2∕4H-SiC by conductive atomic force microscopy
5. Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping
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