Reliability of thermally oxidized SiO2∕4H-SiC by conductive atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2207991
Reference13 articles.
1. SiC/SiO2 Interface States: Properties and Models
2. Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
3. The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
4. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
5. Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H–SiC
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