Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3313924
Reference18 articles.
1. Radiation Damage in SiO2/Si Induced by VUV Photons
2. Etch Rate Acceleration of SiO2during Wet Treatment after Gate Etching
3. Radiation Damage ofSiO2Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma
4. Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation
5. Damage mechanism in low-dielectric (low-k) films during plasma processes
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