Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching-Reference-Cited by-同舟云学术

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Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

Published:2024-06 Issue: Volume:22 Page:100485
ISSN:2590-0498
Container-title:Materials Today Advances
language:en
Short-container-title:Materials Today Advances

Author:

Lo Yu-Yun,Chen Yi-Ho,Hsu Yun-Cheng,Lee Tzu-Yi,Hung Yu-Ying,Kao Yu-Cheng,Zan Hsiao-Wen,Wuu Dong- Sing,Kuo Hao-Chung,Samukawa Seiji,Horng Ray-Hua^ORCID

Funder

National Science and Technology Council

Publisher

Elsevier BV

Reference22 articles.

1. 57-3:Characterizing image retention for HDR OLED displays;Kam;SID Symp.Dig. Tech. Papers,2020

2. Technology and applications of micro-LEDs: Their characteristics, fabrication, advancement, and challenges;Lee;ACS Photonics,2022

3. Development of microLED;Lin;Appl. Phys. Lett.,2020

4. Effect of inductively coupled plasma damage on performance of GaN–InGaN multi quantum well light-emitting diodes;Yang;Appl. Phys. Lett.,2005

5. UV photon-induced defects and its control in plasma etching process;Ishikawa;J. Appl. Phys.,2008

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