UV photon-induced defect and its control in plasma etching processes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2980333
Reference14 articles.
1. New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line Antenna
2. Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
3. Radiation Damage in SiO2/Si Induced by VUV Photons
4. Synchrotron radiation-induced surface-conductivity of SiO2 for modification of plasma charging
5. In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation
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