Multiple liquid phase epitaxy of In1−xGaxP1−zAszdouble‐heterojunction lasers: The problem of lattice matching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89472
Reference10 articles.
1. Heterostructure injection lasers
2. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
3. Yellow In1−xGaxP1−zAszdouble‐heterojunction lasers
4. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)
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1. Heterostructural Interface Modelling;Materials Research Foundations;2019-10-25
2. LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength;Crystal Research and Technology;1990-06
3. Surface analysis of In1−x Ga x As y P1−y epilayer growth by liquid-phase epitaxy;Journal of Materials Science Letters;1986-01
4. Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP;Semiconductors and Semimetals;1985
5. The effect of growth temperature and impurity doping on composition of LPE InGaAsP on InP;Journal of Crystal Growth;1982-07
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