The effect of growth temperature and impurity doping on composition of LPE InGaAsP on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Self‐aligned structure InGaAsP/InP DH lasers
2. V-grooved substrate buried heterostructure InGaAsP/InP laser
3. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
4. GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
5. Fast pulse behaviour of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga0.47In0.53As;Japanese Journal of Applied Physics;1992-07-15
2. Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy;Soviet Physics Journal;1992-01
3. LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength;Crystal Research and Technology;1990-06
4. LPE growth of Ge-doped InGaAsP/InP by two-phase solution technique;Journal of Crystal Growth;1988-04
5. Growth and doping of InGaAsP/InP by liquid-phase epitaxy;Journal of Crystal Growth;1986-01
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