Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device-Reference-Cited by-同舟云学术

Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device

Published:2020-06-28 Issue:24 Volume:127 Page:245106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chang Kai Ping¹^ORCID,Abushammala Haneen²^ORCID,Sahoo Mamina¹,Jaffre Alexandre³⁴,Alamarguy David³⁴,Jiang Yu⁵^ORCID,Boutchich Mohamed³⁴⁵^ORCID,Lai Chao-Sung¹⁶⁷^ORCID

Affiliation:

1. Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan

2. IMPMC, Sorbonne Université, CNRS, MNHN, 4, place Jussieu, 75005 Paris, France

3. Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France

4. Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 75252 Paris, France

5. CINTRA UMI CNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553

6. Department of Nephrology, Chang Gung Memorial Hospital, Linkou, Taoyuan 33305, Taiwan

7. Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Agence Nationale de la Recherche

Centre National de la Recherche Scientifique

Chang Gung Memorial Hospital, Linkou, Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5126793

Reference48 articles.

1. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

2. Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region

3. Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

4. Modeling of program Vth distribution for 3-D TLC NAND flash memory

5. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe₂–Graphene Heterostructure via Photoemission Electron Microscopy;ACS Applied Electronic Materials;2024-09-03

2. Artificial visual perception neural system using a solution-processable MoS2-based in-memory light sensor;Light: Science & Applications;2023-05-05

3. Fabrication of metal/oxide/fluorographene/oxide/silicon capacitors and their charge trapping properties;Japanese Journal of Applied Physics;2023-03-23

4. Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer;ECS Journal of Solid State Science and Technology;2021-12-01

5. Modulation of band gap and optical response of layered MoX2 (X = S, Se, Te) for electronic and optoelectronic applications;Materials Today Communications;2021-09