Observation and electronic characterization of ‘‘new’’E′ center defects in technologically relevant thermal SiO2on Si: An additional complexity in oxide charge trapping-Reference-Cited by-同舟云学术

Observation and electronic characterization of ‘‘new’’E′ center defects in technologically relevant thermal SiO2on Si: An additional complexity in oxide charge trapping

Published:1994-09 Issue:5 Volume:76 Page:2872-2880
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Conley John F.,Lenahan P. M.,Evans H. L.,Lowry R. K.,Morthorst T. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.358428

Reference31 articles.

1. Radiation-Induced Paramagnetic Defects in MOS Structures

2. Microstructural Variations in Radiation Hard and Soft Oxides Observed through Electron Spin Resonance

3. Hole traps and trivalent silicon centers in metal/oxide/silicon devices

4. Electron spin resonance observation of the creation, annihilation, and charge state of the 74‐Gauss doublet in device oxides damaged by soft x rays

5. E′ Centers in Silicon Dioxide Films: A Comparison with Bulk Centers and their Role in “Rebound” Effects*

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