E′ Centers in Silicon Dioxide Films: A Comparison with Bulk Centers and their Role in “Rebound” Effects*
Author:
Publisher
Walter de Gruyter GmbH
Subject
Physical and Theoretical Chemistry
Link
https://www.degruyter.com/document/doi/10.1524/zpch.1987.151.Part_1_2.227/pdf
Reference11 articles.
1. Phys. Rev. B, to be published.
2. The structure of thermally grown noncrystalline SiO2 films on silicon
3. Radiation-Induced Defect Centers in Thermally Grown Oxide Films
4. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron‐spin‐resonance evidence for an impurity‐relatedE’‐like hole trapping defect in thermally grown SiO2on Si;Journal of Applied Physics;1994-12-15
2. Observation and electronic characterization of twoE’ center charge traps in conventionally processed thermal SiO2on Si;Applied Physics Letters;1994-10-31
3. Observation and electronic characterization of ‘‘new’’E′ center defects in technologically relevant thermal SiO2on Si: An additional complexity in oxide charge trapping;Journal of Applied Physics;1994-09
4. Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2systems;Applied Physics Letters;1994-06-20
5. The Roles of Several E′ Variants in Thermal Gate Oxide Reliability;MRS Proceedings;1994
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