Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB)-Reference-Cited by-同舟云学术

Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB)

Published:2023-05-01 Issue:5 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

McPherson J. W.¹^ORCID

Affiliation:

1. McPherson Reliability Consulting LLC , 2805 Shelton Way, Plano, Texas 75093, USA

Abstract

A molecular physics-based model is presented for understanding the frequency dependence of time-dependent dielectric breakdown (TDDB). The fundamental physics behind the frequency dependence comes from the relative dielectric constant ɛr, which is known to be frequency dependent. A small fractional power-law decrease in dielectric constant with frequency produces a lower local electric field with a significant improvement in TDDB lifetime with frequency.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0150268/17423270/055217_1_5.0150268.pdf

Reference50 articles.

1. Low-field time-dependent dielectric integrity,1979

2. Time zero dielectric reliability test by a ramp method,1981

3. Acceleration factors for thin gate oxide stressing,1985

4. A quantitative physical model for time-dependent breakdown,1985

5. Statistical modeling of silicon dioxide reliability,1988

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