Electron spin resonance observation of the creation, annihilation, and charge state of the 74‐Gauss doublet in device oxides damaged by soft x rays
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98670
Reference11 articles.
1. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
2. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
3. Electron spin resonance observation of defects in device oxides damaged by soft x rays
4. Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors
5. The Role of Hydrogen in SiO2 Films on Silicon
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