Electron spin resonance observation of defects in device oxides damaged by soft x rays
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97761
Reference15 articles.
1. Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors
2. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
5. Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Model of the behavior of MOS structures under ionizing irradiation;Semiconductors;2014-04
2. Impact of Hydrogen on the Bias Temperature Instability;Bias Temperature Instability for Devices and Circuits;2013-09-10
3. Dominating Defects in the MOS System;Defects in Microelectronic Materials and Devices;2008-11-19
4. Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures;Applied Physics Letters;2007-04-23
5. Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices;IEEE Transactions on Nuclear Science;2005-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3