Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335931
Reference63 articles.
1. Effect of Photon Energy on the Response of MOS Devices
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5. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
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