P-channel MOSFET as ionizing radiation detector
Author:
Funder
Ministarstvo Prosvete, Nauke i Tehnološkog Razvoja
Publisher
Elsevier BV
Subject
Radiation
Reference69 articles.
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5. On the combined effect of silicon oxide thickness and boron implantation under the gate in MOSFET dosimeters;Biasi;IEEE Trans. Nucl. Sci.,2020
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