Oxidation of SiC investigated by ellipsometry and Rutherford backscattering spectrometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2949268
Reference38 articles.
1. Silica films on silicon carbide: a review of electrical properties and device applications
2. Interfacial investigation of in situ oxidation of 4H-SiC
3. Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide
4. Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC
5. Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC
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