Interfacial investigation of in situ oxidation of 4H-SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. (3×3)R30°reconstruction of the6H−SiC(0001) surface: A simpleT4Si adatom structure solved by grazing-incidence x-ray diffraction
2. X-ray spectroscopy of the oxidation of 6H-SiC(0001)
3. Electronic states of an ordered oxide on C-terminated 6H–SiC
4. Epitaxially ideal oxide–semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (0001̄) SiC surfaces
5. Atomic and electronic structure of silicate adlayers on polar hexagonal SiC surfaces
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