Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Léa di Coccio, LETI, France, pers. Comm
3. An 18O Study of the Oxidation Mechanism of Silicon in Dry Oxygen
4. A very narrow resonance in 18O(p, α)15N near 150 keV: Application to isotopic tracing
5. A very narrow resonance in 18O(p, α)15N near 150 keV: Application to isotopic tracing. II. High resolution depth profiling of 18O
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