Competing influence of damage buildup and lattice vibrations on ion range profiles in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1594281
Reference15 articles.
1. Implantation profiles of 32P channeled into silicon crystals
2. Random and channeled implantation profiles and range parameters for P and Al in crystalline and amorphized Si
3. Modeling of cumulative damage effects on ion-implantation profiles
4. Critical angles and low-energy limits to ion channeling in silicon
5. Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon
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