Random and channeled implantation profiles and range parameters for P and Al in crystalline and amorphized Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337060
Reference21 articles.
1. Ion‐Implanted Phosphorous in Silicon: Profiles Using C‐V Analysis
2. Channeling of Phosphorous Ions in Silicon
3. Channeling and dechanneling of ion‐implanted phosphorus in silicon
4. Channeled‐ion implantation of group‐III and group‐V ions into silicon
5. Channeling of implanted phosphorus through polycrystalline silicon
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