Magnetotransport and electron subband studies of edge delta‐doped Al0.27Ga0.73As/GaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357523
Reference29 articles.
1. Electronic properties of two-dimensional systems
2. Electric subbands in Si-delta-doped GaAs grown by metalorganic chemical vapor deposition
3. Diffusion limiting mechanism in Si-delta doped GaAs grown by metalorganic chemical vapor deposition
4. Properties of center and edge δ‐doped GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition
5. Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ‐doped GaAs:Si
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double -doped GaAs quantum wells;Microelectronics Journal;2008-03
2. Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations;Microelectronics Journal;2005-03
3. Magnetotransport and electronic subband studies of Si delta-doped In0.1Ga0.9As/GaAs strained single quantum wells;Applied Surface Science;2001-02
4. Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells;Modelling and Simulation in Materials Science and Engineering;2000-12-14
5. MAGNETOTRANSPORT STUDY IN SEMICONDUCTOR QUANTUM WELL SYSTEMS;Journal of Physics and Chemistry of Solids;1998-09
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