Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ‐doped GaAs:Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104954
Reference18 articles.
1. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
2. Subband physics for a “realistic” δ-doping layer
3. The σ doping layer: Electronic properties and device perspectives
4. Migration of Si in δ-doped GaAs
5. Measurement of narrow Si dopant distributions in GaAs by SIMS
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