Photoluminescence of near-lattice-matched GaN∕AlInN quantum wells grown on free-standing GaN and on sapphire substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2837630
Reference10 articles.
1. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
2. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
3. Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates
4. Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer
5. Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells
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1. Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells;Journal of Applied Physics;2016-05-28
2. Influence of the barrier composition in GaN/InxAl1−xN quantum wells properties;Journal of Crystal Growth;2014-03
3. Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition onc-Plane Sapphire;Japanese Journal of Applied Physics;2013-08-01
4. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates;Journal of Crystal Growth;2012-02
5. The negligible effects of miscut on indium aluminium nitride growth;physica status solidi (c);2011-11-29
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