Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates-Reference-Cited by-同舟云学术

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Published:2012-02 Issue:1 Volume:340 Page:66-73
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Guangyu,Zhang Jing,Li Xiao-Hang,Huang G.S.,Paskova Tanya,Evans Keith R.,Zhao Hongping,Tansu Nelson

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference76 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

3. Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

5. Origin of efficiency droop in GaN-based light-emitting diodes

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