Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells
Author:
Affiliation:
1. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Funder
Sciex-NMSch
Swiss National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4951711
Reference66 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Group III-nitride lasers: a materials perspective
3. Ultraviolet light-emitting diodes based on group three nitrides
4. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
5. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
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1. Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells;Journal of Computational Electronics;2017-12-14
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