Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates-Reference-Cited by-同舟云学术

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Published:2014-10-06 Issue:14 Volume:105 Page:141106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Xiao-Hang¹,Detchprohm Theeradetch¹,Kao Tsung-Ting¹,Satter Md. Mahbub¹,Shen Shyh-Chiang¹,Douglas Yoder P.¹,Dupuis Russell D.¹,Wang Shuo²,Wei Yong O.²,Xie Hongen²,Fischer Alec M.²,Ponce Fernando A.²,Wernicke Tim³,Reich Christoph³,Martens Martin³,Kneissl Michael³

Affiliation:

1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA

2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

3. Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623, Germany

Funder

U.S. Department of Energy (DOE)

Defense Advanced Research Projects Agency (DARPA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4897527

Reference24 articles.