Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells-Reference-Cited by-同舟云学术

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Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

Published:2017-12-14 Issue:1 Volume:17 Page:373-381
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Hasan Md. Soyaeb,Islam Md. Sherajul,Islam Md. Rafiqul,Mehedi Ibrahim Mustafa,Makino Takayuki

Funder

Advanced Studies & Research (CASR) at Khulna University of Engineering & Technology, Bangladesh

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10825-017-1115-3/fulltext.html

Reference39 articles.

1. Kim, M.H., Schubert, M.F., Dai, Q., Kim, J.K., Schubert, E.F., Piprek, J., Park, Y.: Origin of efficiency droops in GaN-based light-emitting diodes. Appl. Phys. Lett. 91(18), 183507 (2007)

2. Tansu, N., Zhao, H., Liu, G., Li, X.H., Zhang, J., Tong, H., Ee, Y.K.: III-nitride photonics. IEEE Photon. J. 2(2), 241–248 (2010)

3. Liu, G., Zhang, J., Li, X.H., Huang, G.S., Paskova, T., Evans, K.R., Tansu, N.: Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates. J. Cryst. Growth 340(1), 66–73 (2012)

4. Wu, Y.F., Saxler, A., Moore, M., Smith, R.P., Sheppard, S., Chavarkar, P.M., Parikh, P.: 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett. 25(3), 117–119 (2004)

5. Kazlauskas, K., Tamulaitis, G., Pobedinskas, P., Žukauskas, A., Springis, M., Huang, C.F., Cheng, Y.C., Yang, C.C.: Exciton hopping in $$\text{ In }_{\rm x}\text{ Ga }_{1-{\rm x}}\text{ N }$$ In x Ga 1 - x N multiple quantum wells. Phys. Rev. B 71(8), 085306 (2005)

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1. Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells;Materials Science in Semiconductor Processing;2023-02

2. Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs;Journal of Luminescence;2021-06

3. Temperature-induced localized exciton dynamics in mixed lead–tin based CH3NH3Pb1−xSnxI3 perovskite materials;AIP Advances;2020-06-01

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