Exciton hopping inInxGa1−xNmultiple quantum wells-Reference-Cited by-同舟云学术

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Exciton hopping inInxGa1−xNmultiple quantum wells

Published:2005-02-08 Issue:8 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kazlauskas K.,Tamulaitis G.,Pobedinskas P.,Žukauskas A.,Springis M.,Huang Chi-Feng,Cheng Yung-Chen,Yang C. C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.085306/fulltext

Reference26 articles.

1. Exciton localization in InGaN quantum well devices

2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

3. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

4. Spatially resolved cathodoluminescence spectra of InGaN quantum wells

5. Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

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1. Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K;physica status solidi (b);2024-03-22

2. Evaluation of ambipolar diffusion coefficient in AlxGa1−xN semiconductor;Journal of Alloys and Compounds;2023-12

3. Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer;AIP Advances;2023-05-01

4. Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells;Materials;2023-02-13

5. Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice;Journal of Luminescence;2023-01

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