Electron transport across a wide AlGaAs barrier
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354222
Reference24 articles.
1. New rectifying semiconductor structure by molecular beam epitaxy
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4. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
5. Resonant Fowler–Nordheim tunneling inn−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitors
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1. Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD;International Journal of Electronics Letters;2019-03-04
2. Quantitative dopant profiling of p-n junction in InGaAs∕AlGaAs light-emitting diode using off-axis electron holography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
3. Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography;IEEE Transactions on Electron Devices;2009-09
4. Vertical transport in GaAs/ Ga1−yAlyAs barrier structures containing quantum wells: Current–temperature characteristics;Superlattices and Microstructures;2008-08
5. Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells;Open Physics;2008-01-01
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