Resonant Fowler–Nordheim tunneling inn−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94564
Reference12 articles.
1. Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe
2. Tunneling in thin MOS structures
3. Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
4. Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
5. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
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