Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326343
Reference10 articles.
1. The effect of surface recombination on current in AlxGa1−xAs heterojunctions
2. Use of oxygen‐doped AlxGa1−xAs for the insulating layer in MIS structures
3. Measurement of MIS capacitors with oxygen‐doped AlxGa1−xAs insulating layers on GaAs
4. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
5. Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe
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