Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD-Reference-Cited by-同舟云学术

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Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD

Published:2019-03-04 Issue:2 Volume:8 Page:223-231
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Chatterjee Soumyadip¹,Mahata Mihir Kumar¹

Affiliation:

1. Department of Electronics & Communication, IIEST , Shibpur, India

Funder

Advanced Technology Development Centre, IIT Kharagpur, India

Department of Electronics and Electrical Communication Engineering, IIT Kharagpur, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2019.1584916

Reference38 articles.

1. Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

2. Fermi-level pinning at heterojunctions

3. Optical devices from AlGaAs-GaAs HBTs heavily doped with amphoteric Si

4. The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

5. Extraction of Schottky diode parameters from forward current‐voltage characteristics

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