Vertical transport in GaAs/ Ga1−yAlyAs barrier structures containing quantum wells: Current–temperature characteristics
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference34 articles.
1. Quantum‐well infrared photodetectors
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1. Control of a resonant tunneling structure by intense laser fields;Superlattices and Microstructures;2016-10
2. Vertical transport through GaAs/InGaP multi-quantum-wells p-i-n diode with evidence of tunneling effects;Journal of Applied Physics;2011-11-15
3. Terahertz Semiconductor Quantum Well Photodetectors;Advances in Infrared Photodetectors;2011
4. Temperature dependence of current–voltage characteristics of terahertz quantum-well photodetectors;Semiconductor Science and Technology;2009-10-20
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