25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers-Reference-Cited by-同舟云学术

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25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

Published:2015-05-25 Issue:21 Volume:106 Page:213501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zeghuzi A.¹,Schmeckebier H.¹,Stubenrauch M.¹,Meuer C.²,Schubert C.²,Bunge C.-A.³,Bimberg D.¹

Affiliation:

1. Department of Solid-State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

2. Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587 Berlin, Germany

3. Hochschule fuer Telekommunikation Leipzig (HfTL), Gustav-Freytag-Str. 43-45, 04277 Leipzig, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921785

Reference22 articles.

1. Erratum for ‘Quantum dot based nanophotonics and nanoelectronics’

2. Self-organization processes in MBE-grown quantum dot structures

3. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

4. High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers

5. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

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