Author:
Wang Guodong,Ji Huiqiang,Shen Junling,Xu Yonghao,Liu Xiaolian,Fu Ziyi
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. A. W. Walker, S. Hechelmann, C. Karcher, O. Hohn, C. Went, M. Niemeyer, et al., “Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures,” Journal of Applied Physics, 2016, 119(15): 155702–1–155702–10.
2. H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Applied Physics Letters, 1998, 73(19): 2742–2744.
3. G. D. Wang, B. L. Liang, B. C. Juang, A. Das, M. C. Debnath, D. L. Huffaker, et al., “Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots,” Nanotechnology, 2016, 27(46): 465701–1–465701–6.
4. D. Chettri, T. J. Singh, and K. J. Singh, “InAs/GaAs quantum dot solar cell,” International Journal of Electronics, Electrical and Computational System, 2017, 6(3): 221–224.
5. A. D. Utrilla, D. F. Reyes, J. M. Llorens, I. Artacho, T. Ben, D. Gonzalez, et al., “Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells,” Solar Energy Materials & Solar Cells, 2017, 159: 282–289.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献