Formation of the seed layers for layer-transfer process silicon solar cells by zone-heating recrystallization of porous silicon structures-Reference-Cited by-同舟云学术

Formation of the seed layers for layer-transfer process silicon solar cells by zone-heating recrystallization of porous silicon structures

Published:2016-05-23 Issue:21 Volume:108 Page:213904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lukianov A.¹,Murakami K.²,Takazawa C.²,Ihara M.²

Affiliation:

1. FUkushima Top-level United center for Renewable Energy research–PhotoVoltaics Innovation, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0215, Japan

2. Deapartment of Chemical Engineering, Tokyo Institute of Technology, Ookayama, 2-12-1, Meguro-ku, Tokyo 152-8552, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference25 articles.

1. Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization

2. Suppression of substrate distortion during zone–melting recrystallization process for thin film silicon solar cells

3. High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cells

4. Fabrication of SOI Films with High Crystal Uniformity by High-Speed Zone-Melting Crystallization

5. Fabrication of silicon thin films with defects below detection limit of electron spin resonance for solar cells by high-speed zone-melting crystallization of amorphous silicon

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