Fabrication of silicon thin films with defects below detection limit of electron spin resonance for solar cells by high-speed zone-melting crystallization of amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1421231
Reference10 articles.
1. Characterization and entrainment of subboundaries and defect trails in zone‐melting‐recrystallized Si films
2. Subboundary‐free zone‐melt recrystallization of thin‐film silicon
3. Zone Melting Recrystallization of Thin Si Films: Effect of Relief in the SiO2 Cap
4. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
5. Wafer bonding for silicon‐on‐insulator technologies
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