Fabrication of SOI Films with High Crystal Uniformity by High-Speed Zone-Melting Crystallization-Reference-Cited by-同舟云学术

Fabrication of SOI Films with High Crystal Uniformity by High-Speed Zone-Melting Crystallization

Published:2003 Issue:5 Volume:150 Page:A594
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yokoyama Shuhei,Ihara Manabu,Izumi Koichi,Komiyama Hiroshi,Yokoyama Chiaki

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. M. Ihara and H. Komiyama, inExpanding World of Chemical Engineering, 2nd ed., S. Furusaki, L. S. Fan and J. Garside, Editors, p. 309, Taylor & Francis, London (2001).

2. H. Tayanaka, K. Yamaguchi, and T. Matsushita, inProceedings of the Second World Conference on Photovoltaic Solar Energy Conversion, European Commission in Ispra, p. 1272 (1998).

3. Quasi-monocrystalline silicon for thin-film devices

4. Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell

5. Characterization of thin-film silicon formed by high-speed zone-melting recrystallization process

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