Deep level study of chlorine-based dry etched β − Ga2O3-Reference-Cited by-同舟云学术

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Deep level study of chlorine-based dry etched β − Ga2O3

Published:2021-07-14 Issue:2 Volume:130 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Alfieri G.¹^ORCID,Mihaila A.¹,Godignon P.²,Varley J. B.³^ORCID,Vines L.⁴

Affiliation:

1. Hitachi-ABB Power Grids, Fabrikstrasse 3, 5600 Lenzburg, Switzerland

2. National Center of Microelectronics, CNM-CSIC, Barcelona Campus, Bellaterra-Barcelona, Spain

3. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

4. Center for Material Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway

Funder

Lawrence Livermore National Laboratory

Norges Forskningsråd

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0050416

Reference48 articles.

1. Recent progress in Ga2O3power devices

2. Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

3. A survey of acceptor dopants forβ-Ga2O3

4. Acceptor doping of β-Ga2O3 by Mg and N ion implantations

5. Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes;Applied Physics Reviews;2024-04-17

2. Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2024-04-10

3. β-Ga2O3 Schottky barrier height improvement using Ar/O2 plasma and HF surface treatments;Applied Physics Letters;2024-02-12

4. Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics;Journal of Semiconductors;2023-06-01

5. β-Ga₂O₃ Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination;Applied Physics Letters;2022-11-14

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