Effect of helium dilution during plasma‐enhanced deposition on electron trapping in silicon dioxide thin films-Reference-Cited by-同舟云学术

Effect of helium dilution during plasma‐enhanced deposition on electron trapping in silicon dioxide thin films

Published:1992-02-10 Issue:6 Volume:60 Page:695-697
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Y. C.,Johnson N. M.,Jackson W. B.,Stevens K. S.,Smith D. L.,Hagstrom S. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.106540

Reference9 articles.

1. See for example,Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by V. J. Kapoor and K. T. Handkins, Electrochemical Soc.87–10, (1986), and references therein.

2. III-V compound semiconductor insulated gate field effect transistors

3. Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD)

4. Plasma-enhanced CVD of high quality insulating films

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