Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD)-Reference-Cited by-同舟云学术

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Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD)

Published:1989-10 Issue:1-4 Volume:39 Page:33-56
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lucovsky G.,Tsu D.V.,Kim S.S.,Markunas R.J.,Fountain G.G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation

2. Atomic structure in SiO2 thin films deposited by remote plasma‐enhanced chemical vapor deposition

3. Indirect plasma deposition of silicon dioxide

4. R.F. plasma deposition of silicon nitride layers

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3. Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements;Japanese Journal of Applied Physics;2017-11-10

4. Effects of radio-frequency power on the properties of carbon thin films prepared by thermal chemical vapor deposition enhanced with remote inductively-coupled-plasma using acetylene/nitrogen mixtures;Thin Solid Films;2014-11

5. Investigation of the Flatband Voltage (V_FB) Shift of Al₂O₃ on N₂ Plasma Treated Si Substrate;Journal of Nanoscience and Nanotechnology;2013-09-01

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