Physical and electrical properties of low temperature (<100 °C) SiO2 films deposited by electron cyclotron resonance plasmas-Reference-Cited by-同舟云学术

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Physical and electrical properties of low temperature (<100 °C) SiO2 films deposited by electron cyclotron resonance plasmas

Published:2003-05 Issue:3 Volume:21 Page:728-739
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Rashid R.,Flewitt A. J.,Robertson J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1562179

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The fabrication of size-tunable nitrogen-doped dual-mesoporous carbon nanospheres with excellent thermal stability via colloidal silica driving co-assembly strategy;Carbon;2018-01

2. Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells;IEEE Journal of Photovoltaics;2016-09

3. Regeneration of a supported Nafion® catalyst for the double-bond isomerization of octadecenes;Applied Catalysis A: General;2016-09

4. Nanocrystalline Silicon Thin Films Fabricated at 80°C by Using Electron Cyclotron Resonance Chemical Vapor Deposition;Plasma Science and Technology;2010-10

5. A simple synthesis of large-scale SiC–SiO2 nanocables by using thermal decomposition of methanol: Structure, FTIR, Raman and PL characterization;Journal of Crystal Growth;2009-09

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