Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1−xP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348551
Reference18 articles.
1. Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy
2. Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy
3. The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
4. A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
5. Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAs
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1. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate;Journal of Crystal Growth;2016-09
2. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE;Nanotechnology;2015-02-04
3. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine;Journal of Materials Science;2006-10-20
4. Vapor Phase Epitaxy, Real-time Process Monitoring by P-Polarized Reflectance Spectroscopy and Closed-loop Control of;Encyclopedia of Materials: Science and Technology;2001
5. Correlation of InGaP(001) surface structure during growth and bulk ordering;Physical Review B;1999-09-15
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