Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101117
Reference8 articles.
1. Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
2. Gallium‐ and arsenic‐induced oscillations of intensity of reflection high‐energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy
3. A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
4. RHEED Intensity Observation during TEGa-As4Alternate Supply Growth of GaAs
5. Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy
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1. Kinetic modelling of GaAs chemical beam epitaxy;Surface Science;1993-08
2. Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy;Journal of Applied Physics;1993-02
3. Growth reactions and mechanisms in chemical beam epitaxy (CBE);Journal of Crystal Growth;1992-05
4. Chemical beam epitaxy;Critical Reviews in Solid State and Materials Sciences;1992-01
5. Molecular beam epitaxial growth of GaAs and other compound semiconductors;Thin Solid Films;1991-12
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