Growth reactions and mechanisms in chemical beam epitaxy (CBE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. A review of CBE, MOMBE and GSMBE
2. Gaseous dopant sources in MOMBE/CBE
3. Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As
4. Growth mechanism studies in CBE/MOMBE
5. 2nd Intern. Conf. on Chemical Beam Epitaxy;J. Crystal Growth,1990
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