Growth mechanism studies in CBE/MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference48 articles.
1. Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs
2. 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs
3. Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry
4. In situ infrared spectroscopy of molecular-beam epitaxy grown GaAs
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1. Design of the OMVPE Process;Organometallic Vapor-Phase Epitaxy;1999
2. Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBE;Journal of Crystal Growth;1998-06
3. Photo Modified Growth of GaAs by Chemical Beam Epitaxy;MRS Proceedings;1998-01
4. Full gaseous source growth of separate confinement MQW 1.55 μm laser structures in a production MOMBE;Journal of Crystal Growth;1997-05
5. Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE;Journal of Crystal Growth;1997-01
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