Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations-Reference-Cited by-同舟云学术

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Published:2016-03-01 Issue:3 Volume:18 Page:154-161
ISSN:2156-8952
Container-title:ACS Combinatorial Science
language:en
Short-container-title:ACS Comb. Sci.

Author:

Wagner Estelle¹²,Sandu Cosmin S.¹²,Harada Scott²,Pellodi Cedric³,Jobin Marc³,Muralt Paul⁴,Benvenuti Giacomo¹²

Affiliation:

1. ABCD Technology, 12 Route de Champ-Colin, CH-1260 Nyon, Switzerland

2. 3D-Oxides, Technoparc, 130 rue Gustave Eiffel, F-01630, Saint Genis Pouilly, France

3. HEPIA, University of Applied Sciences (HES-SO), 4 rue de la Prairie, CH-1202 Genève, Switzerland

4. Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne, Switzerland

Funder

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

General Chemistry,General Medicine

Link

https://pubs.acs.org/doi/pdf/10.1021/acscombsci.5b00146

Reference83 articles.

1. Advances in MOVPE, MBE, and CBE

2. Metalorganic CVD of GaAs in a molecular beam system

3. Benefits of chemical beam epitaxy for micro and optoelectronic applications

4. Chemical beam epitaxy — a child of surface science

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