Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98507
Reference11 articles.
1. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
2. Chemical beam epitaxy of InP and GaAs
3. Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
4. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
5. Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
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