Impacts of annealing temperature on charge trapping performance in Zr0.5Hf0.5O2 for nonvolatile memory-Reference-Cited by-同舟云学术

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Impacts of annealing temperature on charge trapping performance in Zr0.5Hf0.5O2 for nonvolatile memory

Published:2016-10-14 Issue:14 Volume:120 Page:145304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhao J. H.¹,Yan X. B.¹²,Li Y. C.¹,Yang T.¹,Jia X. L.¹,Zhou Z. Y.¹,Zhang Y. Y.¹

Affiliation:

1. Key Laboratory of Optoelectronic Information Materials of Hebei Province, College of Electron and Information Engineering, Key Laboratory of Digital Medical Engineering of Hebei Province, Hebei University, Baoding 071002, People's Republic of China

2. Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4964695

Reference22 articles.

1. In situ electron holography study of charge distribution in high-κ charge-trapping memory

2. Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

3. Integrated nanoelectronics for the future

4. On the go with SONOS

5. Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage;RSC Advances;2020

2. Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer*;Chinese Physics B;2019-09-01

3. Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots;Functional Materials Letters;2019-01-21

4. Investigation of multilayer WS2 flakes as charge trapping stack layers in non-volatile memories;Applied Physics Letters;2018-06-04

5. Modulation of the microstructure, optical, and electrical properties of HfYO gate dielectrics by annealing temperature;Journal of Alloys and Compounds;2018-02

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